Semiconductor device and its fabricating method

Details Semiconductor device and its fabricating method Semiconductor device and its fabricating method

1993-04-30

1996-12-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117930, 437108, H01L 2120

Patent

active

055826407

ABSTRACT:
A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

REFERENCES:
patent: 4371421 (1983-02-01), Fan et al.

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