Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2007-01-19
2009-10-13
Mandala, Victor A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S565000, C257SE27022, C257SE27039
Reexamination Certificate
active
07602045
ABSTRACT:
In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF<BVec is satisfied in a predetermined current value Id of a current flowing in the diode, and the maximal doping concentration of the n-type cathode layer of the diode is higher than that of the n-type buffer layer of the IGBT.
REFERENCES:
patent: 4383268 (1983-05-01), Martinelli et al.
patent: 5701018 (1997-12-01), Hanaoka et al.
patent: 5923055 (1999-07-01), Schlangenotto et al.
patent: 5952682 (1999-09-01), Oshino
patent: 6144046 (2000-11-01), Hanaoka et al.
patent: 2002/0195656 (2002-12-01), Hattori
patent: 2004/0021203 (2004-02-01), Flohrs et al.
patent: 2006/0138607 (2006-06-01), Nemoto
patent: 2007/0026577 (2007-02-01), Francis et al.
patent: 2007/0120215 (2007-05-01), Yun et al.
patent: 07-283401 (1995-10-01), None
patent: 09-199712 (1997-07-01), None
patent: 2001-156299 (2001-06-01), None
patent: 2002-314083 (2002-10-01), None
patent: 3687614 (2002-10-01), None
Mori Mutsuhiro
Nagase Takuo
Antonelli, Terry Stout & Kraus, LLP.
Harriston William
Mandala Victor A.
Renesas Technology Corp.
LandOfFree
Semiconductor device and inverter device using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and inverter device using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and inverter device using the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4140197