Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-07-20
1999-03-02
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257183, H01L 2974, H01L 310328
Patent
active
058775188
ABSTRACT:
A semiconductor switching device is provided having a pn junction composed of a first semiconductor layer made of a first conductivity type semiconductor and a second semiconductor layer made of a second conductivity type semiconductor having a wider band-gap than that of the first semiconductor layer.
REFERENCES:
patent: 5202750 (1993-04-01), Gough
patent: 5336909 (1994-08-01), Katoh et al.
Nagasu Masahiro
Sakurai Naoki
Fahmy Wael
Hitachi , Ltd.
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