Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2008-09-05
2009-08-25
Tang, Minh N (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S765010, C257S290000, C257SE33045
Reexamination Certificate
active
07579858
ABSTRACT:
A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia,14a,14b) characterized by the following facts: on the principal surface of first semiconductor layer11of the first electroconductive type, second semiconductor layer12of the second electroconductive type is formed; element isolating region Ia of the first electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer so as to isolate the photodiode region; to the outside of the photodiode region isolated by the element isolating regions, moat region E of the second electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer; a voltage different from that applied to the second semiconductor layer in the photodiode region is applied to the moat region, and based on the current flowing between the moat region and the second semiconductor layer in the photodiode region, the presence/absence of an inversion layer of the second electroconductive type formed in the outer layer portion of the first semiconductor layer is detected.
REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi
patent: 6252286 (2001-06-01), Arai
patent: 6392282 (2002-05-01), Sahara
patent: 7423305 (2008-09-01), Shinohara et al.
patent: 2003/0168709 (2003-09-01), Kashiura
patent: 2001320079 (2001-11-01), None
Brady III Wade J.
Tang Minh N
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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