Semiconductor device and inspection method thereof

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C324S765010, C257S290000, C257SE33045

Reexamination Certificate

active

07579858

ABSTRACT:
A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia,14a,14b) characterized by the following facts: on the principal surface of first semiconductor layer11of the first electroconductive type, second semiconductor layer12of the second electroconductive type is formed; element isolating region Ia of the first electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer so as to isolate the photodiode region; to the outside of the photodiode region isolated by the element isolating regions, moat region E of the second electroconductive type is formed extending through the second semiconductor layer to reach the outer layer portion of the first semiconductor layer; a voltage different from that applied to the second semiconductor layer in the photodiode region is applied to the moat region, and based on the current flowing between the moat region and the second semiconductor layer in the photodiode region, the presence/absence of an inversion layer of the second electroconductive type formed in the outer layer portion of the first semiconductor layer is detected.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi
patent: 6252286 (2001-06-01), Arai
patent: 6392282 (2002-05-01), Sahara
patent: 7423305 (2008-09-01), Shinohara et al.
patent: 2003/0168709 (2003-09-01), Kashiura
patent: 2001320079 (2001-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and inspection method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and inspection method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and inspection method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4137457

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.