Semiconductor device and hetero-junction bipolar transistor

Details Semiconductor device and hetero-junction bipolar transistor Semiconductor device and hetero-junction bipolar transistor

2007-06-12

2007-06-12

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S011000, C257S012000, C257S183000, C257S200000

Reexamination Certificate

active

10927525

ABSTRACT:
In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.

REFERENCES:
patent: 5641975 (1997-06-01), Agarwal et al.
patent: 6858509 (2005-02-01), Delage et al.
patent: 2002/0195619 (2002-12-01), Makimoto et al.
patent: 2002-305204 (2002-10-01), None
O. Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, J. of Applied Physics, vol. 85, No. 6, pp. 3222-3233, Mar. 15, 1999.

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