Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-07-31
2007-07-31
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE29151, C257SE51005
Reexamination Certificate
active
11186750
ABSTRACT:
A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third electrode surrounding the second electrode in the same plane, a fourth electrode surrounding the third electrode in the same plane, a first gate electrode insulated from the first through fourth electrodes and arranged on another plane separate from the first through fourth electrodes to correspond to a space between the first electrode and the second electrode, a second gate electrode insulated from the first through fourth electrodes and arranged on yet another plane separate from the plane of the first through fourth electrodes to correspond to a space between the third electrode and the fourth electrode, and a semiconductor layer insulated from the first gate electrode and the second gate electrode and contacting the first through fourth electrodes.
REFERENCES:
patent: 5847413 (1998-12-01), Yamazaki et al.
patent: 6894312 (2005-05-01), Yamazaki et al.
patent: 2002-141511 (2002-05-01), None
patent: 2004-048036 (2004-02-01), None
Korean Office Action of the Korean Patent Application No. 2004-61670, issued on May 4, 2006.
Koo Jae-Bon
Suh Min-Chul
Bushnell , Esq. Robert E.
Ho Tu-Tu
Samsung SDI & Co., Ltd.
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