Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-12-01
2009-10-06
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE29317, C257S613000
Reexamination Certificate
active
07598548
ABSTRACT:
A Schottky electrode including a WNx layer on an n-type GaN layer. A crystal plane of the n-type GaN layer is in contact with a crystal plane of the WNx layer. The crystal plane of the n-type GaN layer is a (0001)-plane, and the crystal plane of the WNx layer is (111)-oriented. The WNx layer may be an electrode layer having an NaCl-type structure including at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum and tungsten, and at least one element selected from nitrogen and carbon. Further, the lattice constant of the electrode layer is preferably 0.95 to 1.05 times the a-axis lattice constant of the n-type GaN layer, multiplied by 2(1/2).
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Dickey Thomas L
Erdem Fazli
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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