Static information storage and retrieval – Floating gate
Reexamination Certificate
2006-05-22
2009-06-30
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
C365S185280, C365S185260, C365S185120, C257S317000, C257S318000, C257S315000, C257S319000
Reexamination Certificate
active
07554840
ABSTRACT:
A memory device is disclosed. A floating gate is disposed overlying a substrate. A tunneling dielectric layer is interposed between the floating gate and the substrate. An inter poly dielectric layer is disposed overlying the floating gate and the substrate. A word line is disposed overlying the floating gate, extending in a row direction. A bit line is disposed in the substrate, extending in a column direction, wherein the bit line is partially overlapped by the floating gate and the word line.
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Birch & Stewart Kolasch & Birch, LLP
Hidalgo Fernando N
Ho Hoai V
Taiwan Semiconductor Manufacturing Co. Ltd.
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