Semiconductor device and fabrication process thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks

Reexamination Certificate

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C257S283000

Reexamination Certificate

active

07005755

ABSTRACT:
A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.

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patent: 6194287 (2001-02-01), Jang
patent: 6215197 (2001-04-01), Iwamatsu
patent: 6303460 (2001-10-01), Iwamatsu
patent: 6440816 (2002-08-01), Farrow et al.
patent: 000513684 (1992-11-01), None
patent: 4-78123 (1992-03-01), None
patent: 9-232207 (1997-09-01), None
patent: 11-67894 (1999-03-01), None
patent: WO 01/67509 (2001-09-01), None

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