Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2006-02-28
2006-02-28
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257S283000
Reexamination Certificate
active
07005755
ABSTRACT:
A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
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Izawa Tetsuo
Kuzuya Shinji
Sukegawa Kazuo
Yoshimura Tetsuo
Armstrong Kratz Quintos Hanson & Brooks, LLP
Fujitsu Limited
Thompson Craig A.
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