Semiconductor device and fabrication process therefor

Details Semiconductor device and fabrication process therefor Semiconductor device and fabrication process therefor

1994-09-07

1996-06-04

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, 257764, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

055236260

ABSTRACT:
An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film.

REFERENCES:
patent: 3881971 (1975-05-01), Greer et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 5202579 (1993-04-01), Fujii et al.
1993, Spring, 40th Applied Physics United Lecture Meeting, Lecture Paper, p. 671 (Lecture No. 29p-ZY-3).

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