Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2010-06-28
2011-10-04
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S258000, C257SE33001
Reexamination Certificate
active
08030659
ABSTRACT:
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region707overlapping with a gate wiring is arranged in an n-channel TFT802forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions717, 718, 719and720not overlapping with a gate wiring are arranged in an n-channel TFT804forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region707than in the LDD regions717, 718, 719and720.
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Kitakado Hidehito
Koyama Jun
Murakami Satoshi
Ohnuma Hideto
Tanaka Yukio
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Tan N
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