Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-06-27
2010-10-12
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S365000, C257S371000, C257SE21640, C257SE21125, C257SE29345, C438S938000
Reexamination Certificate
active
07812374
ABSTRACT:
A semiconductor device includes a first MIS transistor on a first active region of a semiconductor substrate, the first MIS transistor including: a first gate insulating film provided on the first active region; a first gate electrode provided on the first gate insulating film; a first stressor insulating film provided on an upper face and side faces facing in a gate length direction of the first gate electrode such that first stress acts on a channel of the first MIS transistor in the gate length direction; and a first base insulating film provided on side faces of the first gate electrode facing in a gate width direction, wherein the side faces of the first gate electrode facing in the gate width direction are not covered with the first stressor insulating film.
REFERENCES:
patent: 7312485 (2007-12-01), Armstrong et al.
patent: 7414293 (2008-08-01), Shimizu et al.
patent: 7423330 (2008-09-01), Satoh
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2003-60076 (2003-02-01), None
Ootani Katsuhiro
Suzuki Ken
Tamura Nobuyuki
Fahmy Wael M
Ingham John C
McDermott Will & Emery LLP
Panasonic Corporation
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