Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2007-10-30

2007-10-30

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S295000, C257S296000, C257SE29012, C257SE29013

Reexamination Certificate

active

10835310

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a circuit part formed on and above the semiconductor substrate, a passivation film covering the circuit part, an electrode pad provided outside the circuit part in such a manner that the electrode pad is exposed from the passivation film, and a guard ring pattern provided between the electrode pad and the circuit part such that the guard ring pattern surrounds the circuit part substantially. The guard ring pattern extends from a surface of the semiconductor substrate to the passivation film.

REFERENCES:
patent: 6627462 (2003-09-01), Yang et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 2002/0061620 (2002-05-01), Hikosaka et al.
patent: 2004/0202827 (2004-10-01), Okuda
patent: 2005/0186364 (2005-08-01), Okuda
patent: 2000-277465 (2000-10-01), None
patent: 2001-4372 (2001-01-01), None
patent: 2001-0029846 (2001-04-01), None
patent: 2001-0061370 (2001-07-01), None
Notice Requesting Submission of Opinion dated Mar. 28, 2006 issued in corresponding Korean Patent Application No. 10-2004-0037207.
Korean Office Action dated Oct. 31, 2006, issued in corresponding Korean patent application No. 10-2004-0037207.

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