Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

1998-02-23

1999-12-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438720, 438742, 257763, 257770, H01L 2100

Patent

active

060081414

ABSTRACT:
A semiconductor device suitable for increasing operation speed and microminiaturization is provided. First and second impurity diffusion regions are formed sandwiching an element isolation insulation film. After a metal film is deposited all over a substrate, a heat treatment for silicidization is applied to form a metal silicide layer on the first and second impurity diffusion regions. The metal film not silicided is removed by etching with a predetermined region of the metal film on the two metal silicide layers and on the element isolation insulation film covered with a mask. The metal silicide layers on the first and second impurity diffusion regions are electrically connected by a metal interconnection layer that is not silicided and that extends on and in direct contact with the element isolation insulation film.

REFERENCES:
patent: 4878994 (1989-11-01), Jucha et al.
patent: 5376585 (1994-12-01), Lin et al.
patent: 5728619 (1998-03-01), Tsai et al.
T. Yoshida et al; J. Electrochem. Soc., vol. 137, No. 6, pp. 1914-1917, Jun. 1990.

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