Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-10-17
2006-10-17
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000
Reexamination Certificate
active
07122440
ABSTRACT:
A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes lower wiring and a lower insulating film; selectively etching the interlayer insulating film to form a first electrode opening that exposes the lower wiring; forming a first electrode in the first electrode opening such that the first electrode opening is filled; selectively etching the interlayer insulating film at a region of the same adjacent to the first electrode to thereby form a second electrode opening; forming a dielectric layer along inner walls that define the second electrode opening; forming a second electrode on the dielectric layer in such a manner to fill the second electrode opening; and forming upper wiring on at least a portion of the second electrode.
REFERENCES:
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 2002/0155676 (2002-10-01), Stetter et al.
patent: 2003/0002238 (2003-01-01), Toyoda
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Pham Long
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