Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-03
2005-05-03
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000
Reexamination Certificate
active
06888160
ABSTRACT:
To provide a technology for fabricating a bottom gate type TFT by steps having high mass production performance, an insulating film whose major component is silicon is formed on an active layer, the insulating film is patterned and openings are formed at portions thereof constituting source and drain regions at later steps, a resist is provided right above a portion for forming a channel forming region at later steps, a step of adding an impurity is carried out and in this case, the patterned insulating film is utilized as a doping mask.
REFERENCES:
patent: 5032883 (1991-07-01), Wakai et al.
patent: 5198379 (1993-03-01), Adan
patent: 5264728 (1993-11-01), Ikeda et al.
patent: 5348897 (1994-09-01), Yen
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5508216 (1996-04-01), Inoue
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5612235 (1997-03-01), Wu et al.
patent: 5808595 (1998-09-01), Kubota et al.
patent: 5859445 (1999-01-01), Yamazaki
patent: 5891766 (1999-04-01), Yamazaki et al.
patent: 5903014 (1999-05-01), Ino et al.
patent: 5913111 (1999-06-01), Kataoka et al.
patent: 5955765 (1999-09-01), Yamazaki et al.
patent: 5986724 (1999-11-01), Akiyama et al.
patent: 6028325 (2000-02-01), Yamazaki
patent: 5-95002 (1993-04-01), None
patent: 07130652 (1995-05-01), None
patent: 08015686 (1996-01-01), None
Fukunaga Takeshi
Nakajima Setsuo
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Hu Shouxiang
Semiconductor Energy Laboratory Co,. Ltd.
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