Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

1991-05-09

1991-11-12

Wojciechowicz, Edward J.

Fishing, trapping, and vermin destroying

357 234, 357 236, 357 48, 357 49, 357 55, 437 63, 437 78, 437913, H01L 2704, H01L 21302

Patent

active

050652192

ABSTRACT:
An n.sup.+ -type diffusion region (19) is formed in a surface of an n.sup.- -type semiconductor island (11) corresponding to a protrusion (23) by selective diffusion so that the bottom thereof is in contact with an n.sup.+ -type semiconductor layer (12) surrounding the island (11). A drain electrode (22) is formed on the diffusion region (19) to extract an operating current of a VDMOS transistor flowing through the n.sup.+ -type semiconductor layer (12). By virtue of the protrusion (23), the diffusion region (19) can reach the n.sup.+ -type semiconductor layer (12) by not so deep diffusion. Thus, lateral diffusion can be suppressed so that an area required for the diffusion region (19) may be smaller.

REFERENCES:
patent: 4807012 (1989-02-01), Beasom

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