Semiconductor device and fabrication method thereof

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S015000, C438S025000, C438S051000, C438S055000, C438S064000, C438S067000, C438S106000, C438S613000, C438S637000, C257SE21499, C257SE21500, C257SE21503, C257SE21510, C257SE21511

Reexamination Certificate

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07892887

ABSTRACT:
A semiconductor device and a fabrication method thereof are provided. A semiconductor device which is packaged as it includes a semiconductor in which an electronic circuit is disposed, the semiconductor device including: a substrate; a semiconductor chip which has a semiconductor main body having the electronic circuit formed thereon, a pad electrode formed on the semiconductor main body and a projected electrode that is connected to the pad electrode and projected from a surface of the semiconductor main body, wherein the semiconductor chip is mounted on the substrate from the back side of the surface to form the projected electrode thereon; and an insulating layer which is formed as the semiconductor chip buried therein and is polished from a top surface of the insulating layer to a height at which a top of the projected electrode is exposed.

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Japanese Office Action issued Oct. 28, 2008 for corresponding Japanese Application No. 2005-292471.

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