Semiconductor device and fabrication method therefor

Details Semiconductor device and fabrication method therefor Semiconductor device and fabrication method therefor

2005-09-27

2005-09-27

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C438S622000, C438S623000, C438S624000

Reexamination Certificate

active

06949829

ABSTRACT:
With a stopper layer19as an etching stopper, a second groove14aand a contact hole13aare formed. Copper is buried inside the second groove14aand the contact hole13a, thereby forming a plug layer22and an overlying wiring layer21connected to an underlying wiring layer17via the plug layer22. The stopper layer19is comprised of Si, C and N as essential components. First and second cap layers18and23are also comprised of Si, C and N as essential components.

REFERENCES:
patent: 6054398 (2000-04-01), Pramanick
patent: 6068884 (2000-05-01), Rose et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6312874 (2001-11-01), Chan et al.
patent: 6448176 (2002-09-01), Grill et al.
patent: 6724086 (2004-04-01), Grill et al.
patent: 1146555 (2001-10-01), None
patent: 10223758 (1998-08-01), None
patent: 99/33102 (1999-07-01), None
Kow-Ming Chang, et al., “A Novel Pretreatment Technology for Organic Low-Dielectric Material to Suppress Copper Diffusion and Improve Ashing Resistance” Journal of The Electrochemical Society, vol. 147, No. 6, 2000, pp. 2332-2336.

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