Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2007-04-17
2007-04-17
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S151000
Reexamination Certificate
active
10963817
ABSTRACT:
In a semiconductor device including a monocrystalline thin film transistor16athat has been formed on a monocrystalline Si wafer100and then is transferred to a insulating substrate2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer100so as to create a field oxide film (SiO2film)104, and a marker107is formed on the field oxide film104. With this structure, alignment of components may be performed based on a gate electrode106upon or after the transfer step.
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Ogawa Yasuyuki
Takafuji Yutaka
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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