Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Smart card package
Patent
1997-07-03
2000-04-18
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Smart card package
361737, 361749, 235487, 235492, 174 522, 174 524, H01L 2302, H05K 114, G06K 1900
Patent
active
060518774
ABSTRACT:
A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
REFERENCES:
patent: 4409471 (1983-10-01), Aigo
patent: 4603249 (1986-07-01), Hoppe et al.
patent: 4931853 (1990-06-01), Ohuchi et al.
patent: 5155068 (1992-10-01), Tada
patent: 5208450 (1993-05-01), Uenishi et al.
patent: 5362667 (1994-11-01), Linn et al.
patent: 5710458 (1998-01-01), Iwasaki
Tase Takashi
Usami Mitsuo
Clark Jhihan B.
Hitachi , Ltd.
Saadat Mahshid
LandOfFree
Semiconductor device and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2338141