Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-01
2006-08-01
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S459000, C438S027000, C438S030000, C438S614000, C438S626000, C438S672000
Reexamination Certificate
active
07084503
ABSTRACT:
The present invention provides a semiconductor device in which occurrence of disclination caused by steps in a contact portion and steps between pixel electrodes is prevented. A method of fabricating a semiconductor device according to the invention includes forming an insulating film2on an electrode1aso as to cover the electrode; forming contact holes2aand2blocated on the electrode and concave portions2cand2dconnected to the contact hole; embedding a conductive film8in the contact hole and the concave portion and forming a conductive film8on the insulating film; and applying the CMP polishing or the etching-back to the conductive film, and thereby forming a pixel electrode made of the conductive films8aand8bembedded in the contact hole and the concave portion.
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Eguchi Shingo
Higami Yoshinori
Ishikawa Akira
Oda Seiji
Picardat Kevin M.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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