Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2008-08-24

2010-06-22

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C257SE21090, C438S300000, C438S044000

Reexamination Certificate

active

07741138

ABSTRACT:
A semiconductor device and fabricating method thereof are disclosed, by which channel mobility is enhanced and by which effect of flicker noise can be minimized. Embodiments relate to a method of fabricating a semiconductor device which includes forming a first epi-layer over a substrate, forming a second epi-layer over the first epi-layer, forming a gate electrode over the second epi-layer, forming a spacer over both sides of the gate electrode, etching an area adjacent both sides of the spacer to a depth of the substrate, forming an LDD region in a region under the spacer, and forming a third epi-layer for a source/drain region over the etched area adjacent both of the sides of the spacer.

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