Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2007-09-25

2007-09-25

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C257S500000, C257S501000, C257SE21549, C257SE21550

Reexamination Certificate

active

11024742

ABSTRACT:
A semiconductor device including a semiconductor substrate, a device isolation region formed by filling a trench in the semiconductor substrate with dielectric material and defining device regions in the semiconductor substrate. The trench has a rounded upper edge, and a dummy thin layer formed on the rounded upper edge.

REFERENCES:
patent: 5683908 (1997-11-01), Miyashita et al.
patent: 6627512 (2003-09-01), Iwamatsu et al.
patent: 6858515 (2005-02-01), Ishitsuka et al.
patent: 6900090 (2005-05-01), Park
patent: 2003/0181022 (2003-09-01), Mehrad et al.

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