Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

1996-03-08

1997-09-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 437129, H01S 319

Patent

active

056732830

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a strained multi-quantum well with alternatingly laminated first barrier layers and well layers with second barrier layers as outermost layers of the strained MQW structure. The strained MQW structure has a safety factor K.sub.safe =3.9; and ##EQU1## Therefore, it is possible to make the strained MQW structure have a sufficient margin with respect to critical conditions concerning the generation of dislocations, and deterioration of operational characteristics in continuous operation of the semiconductor device can be suppressed so that the reliability of the semiconductor device is enhanced.

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Sugiura et al., "Metalorganic Molecular Beam Epitaxy of Strain-Compensated InAsP/InGaAsP Multi-Quantum-Well Lasers", J. Appl. Phys., vol. 79, No. 3, Feb. 1996; pp. 1233-1237.
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Beernink et al., "Characterization of InGaAs-GaAs strained-Layer Lasers With Quantum Wells Near The Critical Thickness", Appl. Phys. Letters, vol. 55, No. 21, Nov. 1989, pp. 2167-2169.

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