Semiconductor device and electronic device by use of the semicon

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

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257 39, 257104, 257105, 257106, 257321, 257587, 257751, 257754, H01L 2972

Patent

active

054867045

ABSTRACT:
A semiconductor devive comprises;
a collector region of first conductivity type;
a base region of second conductivity type;
an emitter region of the first conductivity type;
a thin film provided on the emitter region and capable of flowing therein a tunnel current; and
a polycrystalline layer laminated on the thin film.
An energy .DELTA..phi..sub.B of potential barrier formed at a grain boundary is not less than a heat energy kT at a temperature therein.

REFERENCES:
patent: 5272357 (1993-12-01), Morishita

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