Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Patent
1993-09-10
1996-01-23
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
257 39, 257104, 257105, 257106, 257321, 257587, 257751, 257754, H01L 2972
Patent
active
054867045
ABSTRACT:
A semiconductor devive comprises;
a collector region of first conductivity type;
a base region of second conductivity type;
an emitter region of the first conductivity type;
a thin film provided on the emitter region and capable of flowing therein a tunnel current; and
a polycrystalline layer laminated on the thin film.
An energy .DELTA..phi..sub.B of potential barrier formed at a grain boundary is not less than a heat energy kT at a temperature therein.
REFERENCES:
patent: 5272357 (1993-12-01), Morishita
Canon Kabushiki Kaisha
Wojciechowicz Edward
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