Semiconductor device and electronic device

Details Semiconductor device and electronic device Semiconductor device and electronic device

2008-09-09

2008-09-09

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S626000, C257S642000, C257SE27131, C257SE27132, C349S044000

Reexamination Certificate

active

11507507

ABSTRACT:
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

REFERENCES:
patent: 4103297 (1978-07-01), McGreivy et al.
patent: 4239346 (1980-12-01), Lloyd
patent: 4609930 (1986-09-01), Yamazaki
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4680580 (1987-07-01), Kawahara
patent: 4748485 (1988-05-01), Vasudev
patent: 4818077 (1989-04-01), Ohwada et al.
patent: 4853760 (1989-08-01), Abe et al.
patent: 4938565 (1990-07-01), Ichikawa
patent: 4949141 (1990-08-01), Busta
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 4984033 (1991-01-01), Ishizu et al.
patent: 4996575 (1991-02-01), Ipri et al.
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5012228 (1991-04-01), Mauda et al.
patent: 5017983 (1991-05-01), Wu
patent: 5034788 (1991-07-01), Kerr
patent: 5051570 (1991-09-01), Tsujikawa et al.
patent: 5055899 (1991-10-01), Wakai et al.
patent: 5056895 (1991-10-01), Kahn
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5091334 (1992-02-01), Yamazaki et al.
patent: 5103277 (1992-04-01), Caviglia et al.
patent: 5117278 (1992-05-01), Bellersen et al.
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5140391 (1992-08-01), Hayashi et al.
patent: 5182620 (1993-01-01), Shimada et al.
patent: 5185535 (1993-02-01), Farb et al.
patent: 5196911 (1993-03-01), Wu
patent: 5198379 (1993-03-01), Adan
patent: 5200846 (1993-04-01), Hiroki et al.
patent: 5227900 (1993-07-01), Inaba et al.
patent: 5233211 (1993-08-01), Hayashi et al.
patent: 5235195 (1993-08-01), Tran et al.
patent: 5246882 (1993-09-01), Hartmann
patent: 5273921 (1993-12-01), Neudeck et al.
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5281840 (1994-01-01), Sarma
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5327001 (1994-07-01), Wakai
patent: 5338959 (1994-08-01), Kim et al.
patent: 5359219 (1994-10-01), Hwang
patent: 5365079 (1994-11-01), Kodaira et al.
patent: 5367180 (1994-11-01), Asai et al.
patent: 5371398 (1994-12-01), Nishihara
patent: 5412240 (1995-05-01), Inoue et al.
patent: 5414278 (1995-05-01), Kobayashi et al.
patent: 5420048 (1995-05-01), Kondo
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5434433 (1995-07-01), Takasu et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5461419 (1995-10-01), Yamada
patent: 5470793 (1995-11-01), Kalnitsky
patent: 5475238 (1995-12-01), Hamada
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5495119 (1996-02-01), Ikeuchi
patent: 5495353 (1996-02-01), Yamazaki et al.
patent: 5497019 (1996-03-01), Mayer et al.
patent: 5499123 (1996-03-01), Mikoshiba
patent: 5506436 (1996-04-01), Hayashi et al.
patent: 5567959 (1996-10-01), Mineji
patent: 5568288 (1996-10-01), Yamazaki et al.
patent: 5580802 (1996-12-01), Mayer et al.
patent: 5604368 (1997-02-01), Taur et al.
patent: 5604380 (1997-02-01), Nishimura et al.
patent: 5612799 (1997-03-01), Yamazaki et al.
patent: 5641974 (1997-06-01), den Boer et al.
patent: 5650637 (1997-07-01), Kodaira et al.
patent: 5681759 (1997-10-01), Zhang
patent: 5696386 (1997-12-01), Yamazaki
patent: 5717224 (1998-02-01), Zhang
patent: 5807772 (1998-09-01), Takemura
patent: 5818076 (1998-10-01), Zhang et al.
patent: 5838508 (1998-11-01), Sugawara
patent: 5849043 (1998-12-01), Zhang et al.
patent: 5899547 (1999-05-01), Yamazaki et al.
patent: 5917221 (1999-06-01), Takemura
patent: 5933205 (1999-08-01), Yamazaki et al.
patent: 5963278 (1999-10-01), Yamazaki et al.
patent: 5990491 (1999-11-01), Zhang
patent: 6011277 (2000-01-01), Yamazaki
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6054734 (2000-04-01), Aozasa et al.
patent: 6501097 (2002-12-01), Zhang
patent: 6655767 (2003-12-01), Zhang et al.
patent: 6800873 (2004-10-01), Zhang
patent: 0 342 925 (1989-11-01), None
patent: 0 450 941 (1991-10-01), None
patent: 2 070 857 (1981-09-01), None
patent: 55-032026 (1980-03-01), None
patent: 58-012353 (1983-01-01), None
patent: 58-115850 (1983-07-01), None
patent: 59-072745 (1984-04-01), None
patent: 59-117267 (1984-07-01), None
patent: 61-067269 (1986-04-01), None
patent: 01-156725 (1986-06-01), None
patent: 61-141174 (1986-06-01), None
patent: 64-053459 (1989-03-01), None
patent: 64-053460 (1989-03-01), None
patent: 64-059866 (1989-03-01), None
patent: 01-241862 (1989-09-01), None
patent: 01-283839 (1989-11-01), None
patent: 01-289917 (1989-11-01), None
patent: 02-015676 (1990-01-01), None
patent: 02-247619 (1990-10-01), None
patent: 03-256365 (1991-11-01), None
patent: 03-280435 (1991-12-01), None
patent: 03-288824 (1991-12-01), None
patent: 04-240733 (1992-08-01), None
patent: 05-011271 (1993-01-01), None
patent: 5-72562 (1993-03-01), None
patent: 06-082822 (1994-03-01), None
patent: 07-302912 (1995-11-01), None
H. Ono Kikuo et al., “Flat Panel Display '91”, p. 109, 1991.
“Planarized Black Matrix on TFT Structure for TFT-LCD Monitors”, SID 97 Digest, pp. 19-22, Kim et al., 1997.
Yojiro Matsueda, “Session 1: Next Generation AM-LCD Technologies,Poly-Si TFT-LCDs for HDTV Projectors”, pp. 65-71, Apr. 7, 1994. English Abstract Included.
Ishii et al., “Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films”, pp. L521-L523, Apr. 1990, Japanese Journal of Applied Physics, vol. 29, No. 4.
Hayashi et al., “High Performance Superthin Film Transistor (SFT) with Twin Gates”, pp. 59-62, 1987, Extended Abstracts of the 19thConference on Solid State Devices and Materials, Tokyo.
Sekigawa et al., “The Development of XMOS Transistor”, pp. 44-49, English Translation pp. 1-5, 1986, Semiconductor World.
Farrah et al., “Analysis of Double-Gate Thin Film Transistor”, pp. 69-74, Feb. 1967, IEEE Transactions on Electron Devices, vol. ED-14, No. 2.
Tuan et al., “Dual-Gate a-Si:H Thin Film Transistors”, pp. 357-359, Dec. 1982, IEEE Electron Device Letters, vol. EDL-3, No. 12.
Ishii et al., “A Trial Product of Dual-Gate MOS (X MOS Device”, p. 405, 1985, 46thJapan Society of Applied Physics, 2a-V-9 with English Translation.

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