Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2005-06-28
2005-06-28
Wille, Douglas A. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C333S246000, C333S248000
Reexamination Certificate
active
06911733
ABSTRACT:
A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.
REFERENCES:
patent: 3943469 (1976-03-01), Kawamoto et al.
patent: 6057600 (2000-05-01), Kitazawa et al.
patent: 6483406 (2002-11-01), Sawa et al.
patent: 5-167258 (1991-12-01), None
Ando Hideko
Fukuhara Masanori
Isomura Satoru
Kikuchi Hiroshi
Kubo Takashi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Reed Smith LLP
Wille Douglas A.
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