Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2005-06-28
2005-06-28
Wille, Douglas A. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C333S247000
Reexamination Certificate
active
06911734
ABSTRACT:
A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.
REFERENCES:
patent: 6057600 (2000-05-01), Kitazawa et al.
patent: 6483406 (2002-11-01), Sawa et al.
patent: 5-167258 (1991-12-01), None
Shouichi Hanatani, Katsuyoshi Harasawa, Kiichi Yamashita and Minoru Maeda, “Characteristics of 565-Mb/s Optical Transmitter with DFB Laser Diode”, Central Research Lab, Hitachi, Ltd. with English translation.
Ando Hideko
Fukuhara Masanori
Isomura Satoru
Kikuchi Hiroshi
Kubo Takashi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Reed Smith LLP
Wille Douglas A.
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