Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Patent
1992-07-23
1993-11-02
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
257796, 257780, 257783, 257734, 257707, 257722, H01L 2302, H01L 2348
Patent
active
052586499
ABSTRACT:
A silicon chip is mounted on a portion a heat dissipation body, and a carrier film is inserted into a resin composition material. Each of input/output electrode portions of the silicon chip is connected electrically to each of lead wires of the carrier film. The electrical connection between the silicon chip and a circuit substrate is carried out by the carrier film. Another portion of the heat dissipation body is exposed on a surface of the resin composition material. A fixing means for fixing the resin composition material is formed integrally to the resin composition material or to the heat dissipation body. The resin composition material is fixed to a circuit substrate through the fixing means. The mechanical fixing between the resin composition material and the circuit substrate is carried out by the fixing means, which is separate from the carrier film. A heat dissipation fin may be provided on the heat dissipation body.
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"Flat Package using Three-Layer Film", IBM TDB, vol. 31, No. 8, Jan. 1989, p. 119.
Miyoshi Tadahiko
Otsuka Kanji
Tanaka Akira
Yamada Kazuji
Hitachi , Ltd.
LaRoche Eugene R.
Nguyen Viet Q.
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