Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-04-15
2008-04-15
Harvey, Minsun Oh (Department: 2828)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S928000, C438S467000, C365S100000
Reexamination Certificate
active
11370837
ABSTRACT:
A semiconductor device includes a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which has a layer including an organic compound as a dielectric, by applying a voltage to a pair of electrodes, the state change caused by the precipitous change in volume (such as bubble generation) is generated between the pair of electrodes. Short-circuiting between a pair of electrodes is promoted by acting force based on this state change. Concretely, a bubble generating area is provided in the memory element to generate a bubble between the first conductive layer and the second conductive layer.
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Asami Yoshinobu
Nomura Ryoji
Yukawa Mikio
Harvey Minsun Oh
King Joshua J
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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