Semiconductor device and design method thereof

Details Semiconductor device and design method thereof Semiconductor device and design method thereof

2006-02-21

2006-02-21

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S766000

Reexamination Certificate

active

07002253

ABSTRACT:
It is an object of the present invention to achieve a semiconductor device capable of preventing circuit malfunctions caused by noise without decreasing an integration degree of the circuit by making a space between signal interconnections wider and inserting a shield or a shield layer between the signal interconnections. The semiconductor device has a multilayer interconnection structure wherein three or more interconnection layers are stacked on a silicon semiconductor substrate, and comprises: a first signal line which is formed with a (N−1)-th interconnection layer and comprises a latch circuit; a second signal line which is formed with a (N+1)-th interconnection layer and is arranged so as to cross the first signal line or partially overlap thereover; and a power supply interconnection serving as a shield interconnection which is formed with an N-th interconnection layer in a portion directly beneath the first signal line and the second signal line.

REFERENCES:
patent: 5933364 (1999-08-01), Aoyama et al.
patent: 6066896 (2000-05-01), Wada et al.
patent: 6166440 (2000-12-01), Yang
patent: 6352914 (2002-03-01), Ball et al.
patent: 11274424 (1999-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and design method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and design method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and design method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3677233