Semiconductor device and control method thereof

Details Semiconductor device and control method thereof Semiconductor device and control method thereof

2009-04-30

2011-12-27

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185110, C365S185130, C365S185120, C365S185240, C365S189050, C365S189080

Reexamination Certificate

active

08085588

ABSTRACT:
Systems and methods for programming data to a memory device (MD). The methods involve receiving the data at MD (100) from an external data source. MD includes a memory cell array (MCA) for storing the data including numbers in data blocks (DB) or memory cell array planes (MCAP). Each DB (122a,122b,122c,122d) and MCAP (1020a,1020b,1020c,1020d) includes memory addresses (Ads) corresponding to locations of respective transistor circuits (2021, 2022, . . . , 202n, . . . , 202m) within the MCA (120, 1020a, 1020b,1020c,1020d). Two or more of the transistor circuits have different threshold voltages (TVs) with respect to each other. The methods further involve programming the data to each DB or MCAP in accordance with a first mode. In the first mode, each number is programmed to a different MA of each DB or MCAP based at least in part on the different TVs.

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