Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1998-03-13
2000-11-28
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257378, H01L 2978
Patent
active
061538965
ABSTRACT:
Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device. The semiconductor device comprises an n-type base layer, a p-type emitter layer, which is formed on a surface of the n-type base layer, a collector electrode, formed on a surface of the p-type emitter layer, a p-type base layer, formed on a surface on the n-type base layer which is opposite to the p-type emitter layer, an n-type source layer, formed in a surface of the p-type base layer, an emitter electrode, formed on the n-type source layer and the p-type base layer, and a gate electrode, contacting the n-type source layer, the p-type base layer and the n-type base layer, with a gate insulating film interposed therebetween, wherein when a voltage is applied between the collector electrode and the emitter electrode, the capacitance of the gate electrode is always a positive value or zero.
REFERENCES:
patent: 5329142 (1994-07-01), Kitagawa et al.
B.J. Baliga, "Power Semiconductor Devices-Insulated Gate Bipolar Transistor", Chapter 8, (1995), pp. 426-502.
Fichtner Wolfgang
Ninomiya Hideaki
Ogura Tsuneo
Ohashi Hiromichi
Omura Ichiro
Hardy David
Kabushiki Kaisha Toshiba
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