Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-10-04
2009-12-08
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185190
Reexamination Certificate
active
07630245
ABSTRACT:
The invention is a semiconductor device that includes a memory cell array having non-volatile memory cells, and a control circuit that writes data into the memory cell array by programming memory cells to be programmed to a first level and then programming the memory cells to a second level, and its control method. According to the present invention, the time necessary for writing data can be reduced by shortening the time for programming to the first level. Further, a required data retention time can be secured by programming to the second level.
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Dinh Son
Spansion LLC
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