Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-01-03
2006-01-03
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S068000, C257S071000, C257S277000
Reexamination Certificate
active
06982472
ABSTRACT:
A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a dielectric film containing tantalum oxide or niobium oxide, an upper electrode containing metal, and at least one of a lower barrier layer which is provided between the lower electrode and the dielectric film and an upper barrier layer which is provided between the upper electrode and the dielectric film, the lower barrier layer and the upper barrier layer being insulating layers which contain silicon and oxygen and containing the oxygen at least in a portion on a side contacting the dielectric film.
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Notification of Reasons for Rejection (Office Action) for Japanese Patent Application No. 2003-053185, dated May 18, 2005 and English translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Wilson Allan R.
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