Semiconductor device and capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S068000, C257S071000, C257S277000

Reexamination Certificate

active

06982472

ABSTRACT:
A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a dielectric film containing tantalum oxide or niobium oxide, an upper electrode containing metal, and at least one of a lower barrier layer which is provided between the lower electrode and the dielectric film and an upper barrier layer which is provided between the upper electrode and the dielectric film, the lower barrier layer and the upper barrier layer being insulating layers which contain silicon and oxygen and containing the oxygen at least in a portion on a side contacting the dielectric film.

REFERENCES:
patent: 5440446 (1995-08-01), Shaw et al.
patent: 6251720 (2001-06-01), Thakur et al.
patent: 6258653 (2001-07-01), Chew et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6551896 (2003-04-01), Hosoda et al.
patent: 6794240 (2004-09-01), Takehiro
patent: 6830983 (2004-12-01), Marsh
patent: 07-058295 (1995-03-01), None
patent: 2000-082782 (2000-03-01), None
patent: 2000-183289 (2000-06-01), None
patent: 2000-208720 (2000-07-01), None
patent: 2002-222934 (2002-08-01), None
Notification of Reasons for Rejection (Office Action) for Japanese Patent Application No. 2003-053185, dated May 18, 2005 and English translation thereof.

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