Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-11-28
2006-11-28
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S141000, C257S143000
Reexamination Certificate
active
07141832
ABSTRACT:
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.
REFERENCES:
patent: 4132996 (1979-01-01), Baliga
patent: 4612560 (1986-09-01), Dortu et al.
patent: 5341004 (1994-08-01), Furuhata
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5631494 (1997-05-01), Sakurai et al.
patent: 5659185 (1997-08-01), Iwamuro
patent: 5751024 (1998-05-01), Takahashi
patent: 5766966 (1998-06-01), Ng
patent: 5818281 (1998-10-01), Ohura et al.
patent: 6008518 (1999-12-01), Takahashi
patent: 6021036 (2000-02-01), Bijlenga et al.
patent: 6153896 (2000-11-01), Omura et al.
patent: 6188109 (2001-02-01), Takahashi
patent: 6362046 (2002-03-01), Arai
patent: 6366321 (2002-04-01), Yonemoto
patent: 2003/0173579 (2003-09-01), Ishii et al.
patent: 2621498 (1997-06-01), None
Y. C. Gerstenmaier, et al., ISPSD, pp. 105-108, “Switching Behaviour of High Voltage IGBTs and its Dependence on Gate-Drive”, May 1997.
T. Schuetze, et al., PCIM, pp. 1/10-10/10, “The New 6.5kV IGBT Module: A Reliable Device for Medium Voltage Applications”, Aug. 2001.
Onozawa, Y., et al., “Great Improvement in Turn-On Power Dissipation of IGBTs with an Extra Gate Charging Function”, Proceedings of the 17thInternational Symposium on Power Semiconductor Devices & IC's, May 23-26, 2005, pp. 207-210.
Inoue Tomoki
Sugiyama Koichi
Crane Sara
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Semiconductor device and capacitance regulation circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and capacitance regulation circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and capacitance regulation circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3648873