Semiconductor device and capacitance measurement method

Details Semiconductor device and capacitance measurement method Semiconductor device and capacitance measurement method

2005-05-17

2005-05-17

Nguyen, Vinh P. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S763010

Reexamination Certificate

active

06894520

ABSTRACT:
A CBCM measurement device includes a PMIS transistor, an NMIS transistor, a first reference conductor section connected to a first node, a second reference conductor section, with a dummy capacitor being formed between the first and second reference conductor sections, a first test conductor section connected to a second node, and a second test conductor section, with a test capacitor being formed between the first and second test conductor sections. The transistors are turned ON/OFF by using control voltages V1and V2, and the capacitance of a target capacitor in the test capacitor is measured based on currents flowing through the first and second nodes. The capacitance measurement precision is improved by, for example, increasing a dummy capacitance.

REFERENCES:
patent: 5999010 (1999-12-01), Arora et al.
patent: 6404222 (2002-06-01), Fan et al.
patent: 6414498 (2002-07-01), Chen
patent: 20010000948 (2001-05-01), Chen
patent: 2001-44203 (2001-02-01), None
B.J. Sheu et al.,“A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's”, IEEE Electron Device Letters, vol. EDL-5, No. 11, pp. 491-493, Nov. 1984.
Yuan Taur et al., “A New ‘Shift and Ratio’ Method for MOSFET Channel-Length Extraction”, IEEE Electron Device Letters, vol. 13, No. 5, pp. 267-269, May 1992.
James C Chen et al., “An On-Chip, Attofarad Interconnect Charge-Based Capacitance Measurement (CBCM) Technique”, IDEM 96, pp. 3.4.1-3.4.4, 1996.

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