Semiconductor device and camera using same

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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Details

C327S112000, C327S437000, C326S068000

Reexamination Certificate

active

11183808

ABSTRACT:
The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1that is connected to the driver transistor D1and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1is applied with a variable bias voltage. The semiconductor device1is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2is applied with a variable bias voltage to vary a resistance value of the load transistor L2.

REFERENCES:
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patent: 6100744 (2000-08-01), Yoon et al.
patent: 6169430 (2001-01-01), Xu
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patent: 6525613 (2003-02-01), Cyrusian
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patent: 2006/0038903 (2006-02-01), Nagayoshi et al.
patent: 0 951 142 (1999-10-01), None
patent: 9-307093 (1997-11-01), None
patent: 2795314 (1998-06-01), None
Patent Abstracts of Japan, vol. 9, No. 189, (E-333), Aug. 6, 1985 & JP 60 058706 A (Sharp KK), Apr. 4, 1985 * whole document *.

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