Semiconductor device and associated fabrication method

Details Semiconductor device and associated fabrication method Semiconductor device and associated fabrication method

1995-08-28

1998-05-19

Picardat, Kevin

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

438109, H01L 2160

Patent

active

057535361

ABSTRACT:
A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.

REFERENCES:
patent: 4754316 (1988-06-01), Reid
patent: 4998665 (1991-03-01), Hayashi
patent: 5107586 (1992-04-01), Eichelberger et al.
patent: 5270261 (1993-12-01), Bertin et al.
patent: 5466634 (1995-11-01), Beilstein, Jr. et al.
patent: 5489804 (1996-02-01), Dasch
patent: 5567653 (1996-10-01), Bertin et al.

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