Semiconductor device and associated fabrication method

Details Semiconductor device and associated fabrication method Semiconductor device and associated fabrication method

1996-01-23

1998-04-07

Niebling, John

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170

Patent

active

057364214

ABSTRACT:
Mounted on a single semiconductor substrate are a DRAM, MOS transistor, resistor, and capacitor. The gate electrode of the DRAM and the gate electrode of the MOS transistor are formed by a common layer (i.e., a first-level poly-Si layer). The storage electrode of the DRAM. the resistor, and the lower electrode of the capacitor are formed by a common layer (i.e., a third-level poly-Si layer). The plate electrode of the DRAM and the upper electrode of the capacitor are formed by a common layer (i.e., a fourth-level poly-Si layer).

REFERENCES:
patent: 5356826 (1994-10-01), Natsume
patent: 5500387 (1996-03-01), Tung et al.

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