Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-10-11
2005-10-11
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S098000, C257S099000, C257S100000, C313S488000, C313S489000, C362S800000
Reexamination Certificate
active
06953952
ABSTRACT:
A semiconductor device comprising a semiconductor element and a support member having a recess for housing the semiconductor element is disclosed. The support member includes lead electrodes and a support part holding the lead electrodes so that a surface of tip portions of the lead electrodes are exposed in a bottom of the recess. A main surface of the support member has at least a first main surface disposed adjacent to the recess and a second main surface disposed adjacent to the first main surface. The second main surface preferably has a protrusion and a further recess. The protrusion preferably forms an outer wall around a depression. The semiconductor device having this configuration has excellent and accurate positioning and can be strongly bonded with other members. The semiconductor device can also be obtained with a high process yield.
REFERENCES:
patent: 6274890 (2001-08-01), Oshio et al.
patent: 6747293 (2004-06-01), Nitta et al.
patent: 2001/0010449 (2001-08-01), Chiu et al.
patent: 8-264842 (1996-10-01), None
patent: 2000-196153 (2000-07-01), None
Dickey Thomas L
Nichia Corporation
Smith Patent Office
Tran Minhloan
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