Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2006-03-30
2008-12-09
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S724000, C257S777000, C257S786000, C257SE25013, C257SE25023
Reexamination Certificate
active
07462929
ABSTRACT:
SI in a semiconductor device in which a plurality of semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module, is to be improved. The semiconductor device comprises a first semiconductor chip and a second semiconductor chip mounted over a package substrate which has a plurality of bonding pads arranged along the edges. The first semiconductor chip has a plurality of bonding pads for analog signals, and the second semiconductor chip has a plurality of bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
REFERENCES:
patent: 6472747 (2002-10-01), Bazarjani et al.
patent: 7253511 (2007-08-01), Karnezos et al.
patent: 2005/0212110 (2005-09-01), Kato
patent: 2004-111656 (2004-04-01), None
patent: 2004-523912 (2004-08-01), None
Abe Yoshiyuki
Hiranuma Kazuhiko
Kuroda Hiroshi
Antonelli, Terry Stout & Kraus, LLP.
Nguyen Dao H
Renesas Technology Corp.
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