Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-05-26
1997-10-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 22, 257 23, 257 24, 257 25, 257194, 257472, 257476, H01L 2906, H01L 310328, H01L 310336
Patent
active
056799624
ABSTRACT:
A semiconductor device includes a semi-insulating semiconductor substrate, a semiconductor layer structure including at least an undoped layer of a first semiconductor, an undoped spacer layer of a second semiconductor having an electron affinity smaller than that of the first semiconductor, and an n type electron supply layer of the second semiconductor successively laminated on the substrate, the undoped layer having a flat top surface and a flat rear surface on the flat top surface of the undoped spacer layer, having, at a top surface, a concavo-convex periodic structure, and a flat rear surface, the n-type electron supply layer of the second semiconductor having a flat top surface and a rear surface that buries concavities of the concavo-convex structure of the undoped spacer layer, and a plurality of periodically arranged Schottky electrodes on the flat top surface of the n type electron supply layer, arranged in a direction perpendicular to the concavo-convex periodic structure of the undoped spacer layer.
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Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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