Patent
1989-06-30
1990-11-13
Hille, Rolf
357 41, 357 59, 357 64, 357 231, H01L 2702, H01L 2904, H01L 29167, H01L 2701
Patent
active
049705687
ABSTRACT:
The present invention relates to semiconductor device, a e.g., a CMOS, comprising a denuded region and a bulk-defect region, as well as the process for producing, e.g., a CMOS. In a conventional CMOS, the distance (dp) between the bulk-defect region and P.sup.+ -type source of drain region--(dp)--is greater than the distance (dn) between the bulk--defect--region and the P well--(dn)--. As a result, a leakage current can be generated in the PN junction. In order to eliminate the problems caused due to dp>dn, the present invention forms in a--semiconductor-substrate a bulk-defect region having a depth which is nonuniform in accordance with the nonuniform depth of the semiconductor elements.
REFERENCES:
patent: 3838440 (1974-09-01), McCaffrey et al.
patent: 3899793 (1975-08-01), Wakamiya et al.
patent: 3946425 (1976-03-01), Shoji et al.
patent: 4053925 (1977-10-01), Burr et al.
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4220483 (1980-09-01), Cazacarra
patent: 4424526 (1984-01-01), Dennard et al.
"Alphas Stymie Statics"; Raymond P. Capece et al, Electronics, 3/15/79; p. 85.
IBM Journal of Research & Development, "Reduction of Leakage by Implantation Gettering in VLSI Circuits", Geipel et al., vol. 24, No. 3, May 1980, pp. 310-317.
Hiraguchi Takao
Imaoka Kazunori
Fahmy Wael
Fujitsu Limited
Hille Rolf
LandOfFree
Semiconductor device and a process for producing a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a process for producing a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a process for producing a semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-780138