Semiconductor device and a method of producing the same

Details Semiconductor device and a method of producing the same Semiconductor device and a method of producing the same

1979-12-19

1983-03-01

Larkins, William D.

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357 55, 357 92, 365155, 365156, 365179, 365181, H01L 2704, G11C 1140, H03K 19091

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043756450

ABSTRACT:
An I.sup.2 L type semiconductor device having an elementary region which is isolated by V-shape grooves from the other portions of the device, said semiconductor device comprising an insulating layer coating covering the surface of the semiconductor body of the device, wherein an injector region is formed under said insulating layer and surrounded by thicker portions of said insulating layer, and base regions are formed under said insulating layer between said thicker portions of said insulating layer and said V-shape grooves.

REFERENCES:
patent: 3978515 (1976-08-01), Evans et al.
patent: 4231056 (1980-10-01), Taylor
patent: 4231057 (1980-10-01), Monna et al.
patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4269636 (1981-05-01), Rivoli et al.
DeClercq et al., Electronics Letters, vol. 12, No. 6, Mar. 18, 1976, pp. 150-151.
Hamilton & Howard, Basic IC Engineering, (McGraw-Hill, N.Y., 1975), pp. 6-7.

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