Semiconductor device and a method of manufacturing thereof

Details Semiconductor device and a method of manufacturing thereof Semiconductor device and a method of manufacturing thereof

1996-04-15

1997-07-29

Powell, William

Fishing, trapping, and vermin destroying

1566561, 1566571, 437189, 437201, 437245, H01L 2100

Patent

active

056521863

ABSTRACT:
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5248628 (1993-09-01), Okabe et al.
patent: 5332684 (1994-07-01), Yamamichi et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5401680 (1995-03-01), Abt et al.
patent: 5444010 (1995-08-01), Park et al.

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