Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2006-06-13
2006-06-13
Clark, S. V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S724000
Reexamination Certificate
active
07061105
ABSTRACT:
Two memory chips mounted over a base substrate have the same external size and a flash memory of the same memory capacity formed thereon. These memory chips are mounted over the base substrate with one of them being overlapped with the upper portion of the other one, and they are stacked with their faces being turned in the same direction. The bonding pads BP of one of the memory chips are disposed in the vicinity of the bonding pads BP of the other memory chip. In addition, the upper memory chip is stacked over the lower memory chip in such a way that the upper memory chip is slid in a direction (X direction) parallel to the one side of the lower memory chip and in a direction (Y direction) perpendicular thereto in order to prevent partial overlapping of it with the bonding pads BP of the lower memory chip.
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Masuda Masachika
Usami Toshihiko
Akita Electronics Systems Co., Ltd.
Antonelli Terry, Stout and Kraus, LLP
Clark S. V.
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