Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2006-01-31

2006-01-31

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

C257S690000, C257S736000, C257S737000, C257S276000, C257S341000

Reexamination Certificate

active

06992386

ABSTRACT:
A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

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