Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2005-06-14

2005-06-14

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C257S592000

Reexamination Certificate

active

06905934

ABSTRACT:
The invention provides a bipolar transistor with improved performance. An insulation film comprising a silicon oxide film is formed by means of oxidation treatment on the side surface of an emitter aperture, and then an epitaxial layer comprised of SiGe is grown selectively in an aperture formed by removing a silicon nitride film so as to form under cut.

REFERENCES:
patent: 4892837 (1990-01-01), Kudo
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 6-112215 (1994-04-01), None

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